6 results
Epitaxial Growth on 2° Off-axis 4H SiC Substrates with Addition of HCl
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1069 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1069-D07-10
- Print publication:
- 2008
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Mechanisms of Stacking Fault Growth in SiC PiN Diodes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 815 / 2004
- Published online by Cambridge University Press:
- 15 March 2011, J6.4
- Print publication:
- 2004
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Growth Evolution of Gallium Nitride Films on Stepped and Step-Free SiC Surfaces
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y3.7
- Print publication:
- 2003
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Extended Defects in 4H-SiC PiN Diodes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 742 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, K3.7
- Print publication:
- 2002
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Characterization of Light Emission from 4H and 6H SiC MOSFETs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H4.9
- Print publication:
- 2000
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Defect Centers Formed During Wet Oxidation of Si-Ge/Si Heterostructures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 220 / 1991
- Published online by Cambridge University Press:
- 22 February 2011, 199
- Print publication:
- 1991
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